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20.12.2005 - Elpida Memory Samples 80nm 2Gbit DDR2 SDRAM | ||||||||||||||||
TOKYO, JAPAN, December 19, 2005 - Elpida Memory, Inc. (Elpida), Japan's leading global supplier of Dynamic Random Access Memory (DRAM), today announced the shipment of 80 nm-based 2 Gigabit DDR2 SDRAM samples. These samples are among the first 80 nm-based devices in the world to be shipped for customer evaluation, and the devices are expected to be used first in high-density memory modules for high performance servers. "Inherent in the 80 nm production process technology is the fact that devices using this process will be even smaller in size, although their density is greater," said Jun Kitano, director of technical marketing for Elpida Memory (USA) Inc. "Based on market demand, Elpida intends to use the 80 nm process for its most advanced DRAM devices at its newly expanded 300 mm wafer manufacturing facility (the E300 Fab) in Hiroshima, Japan." Features and Benefits of 2 Gigabit DDR2 SDRAM: Summary of Features
Elpida originally announced details on the development of 80 nm-based DDR2 SDRAM components on June 23, 2005 (Elpida Memory Develops 2 Gigabit DDR2 SDRAM Using 80 nm Process Technology for Servers). Availability News Source: Elpida Press Release Links | ||||||||||||||||
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