Full title: Intel and Corning Enter Joint Development Agreement for Extreme Ultraviolet Photomask Substrates
Focused on ULE Glass Photomask Substrates for Extreme Ultraviolet
CORNING, N.Y., July 6, 2005 – Intel Corporation and Corning
Incorporated (NYSE:GLW) have entered into an agreement to develop ultra
low thermal expansion ULE® glass photomask substrates required for
Extreme Ultraviolet (EUV) lithography technology. These substrates are
needed to develop low defect EUV photomasks to enable 32nm node
high-volume production using EUV lithography.
"Corning has a rich history of developing innovative products and
our extensive optical materials and process knowledge have positioned
the ULE product as the optimal material for EUV photomask substrates,"
stated Jim Steiner, senior vice president and general manager, Corning
Specialty Materials.
Intel’s leading position in advanced semiconductor manufacturing
will provide the expertise Corning requires to respond rapidly to
industry requirements. The joint development program will help to
enable chip production using EUV technology starting in 2009.
"The cooperative efforts of Corning and Intel will provide the
opportunity to develop ULE® glass substrates and position them as the
material of choice for EUV photomasks," Steiner said. "We are excited
to be working with a technology leader in the semiconductor industry,
and this reaffirms Corning’s commitment to develop the best optical
materials available for semiconductor lithography".
"Driving down EUV photomask defect levels is a critical issue for
the commercialization of EUV technology. Corning and Intel plan to
address the mask substrate contribution to this issue," said Janice
Golda, Intel’s director of lithography. "The development of
higher-quality EUV masks, along with Intel’s related efforts in light
sources, lithography equipment and new photo resists, will help create
the infrastructure needed to position EUV lithography as the key
technology for the future."
Lithography tools are used in chip making to "print" patterns on a
silicon wafer. Today, the industry uses lithography tools that use a
193nm wavelength of light to "print" transistors as small as 50nm. That
is equivalent to a painter trying to draw very fine lines using a thick
brush. EUV lithography technology will use light that is only 13.5nm
wavelength of light, so it can provide chip makers with a very "fine
brush" to "draw" smaller transistors in the future.
EUV lithography has been identified by the International Roadmap of
Semiconductor Technology as the leading technology solution for
next-generation lithography after the current 193nm generation of
lithography tools.
News Source: Intel Press Release
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