SANTA CLARA, Calif., Jan. 25, 2006 – Intel Corporation today
announced it has become the first company to reach an important
milestone in the development of 45 nanometer (nm) logic technology.
Intel has produced what are believed to be the first fully functional
SRAM (Static Random Access Memory) chips using 45nm process technology,
its next– generation, high–volume semiconductor manufacturing process.
Achieving this milestone means Intel is on track to manufacture
chips with this technology in 2007 using 300mm wafers, and continues
the company’s focus on pushing the limits of Moore’s Law, by
introducing a new process generation every two years.
Today, Intel leads the industry in volume production of
semiconductors using 65nm process technology, with two manufacturing
facilities making 65nm chips in Arizona and Oregon and two more coming
online this year in Ireland and Oregon.
“Being first to high volume with 65nm process technology and the
first with a working 45nm chip highlights Intel’s leadership position
in chip technology and manufacturing,” said Bill Holt, vice president,
general manger, Intel Technology and Manufacturing Group. “Intel has a
long history of translating technology leaps into tangible benefits
that people appreciate. Our 45nm technology will provide the foundation
for delivering PCs with improved performance–per– watt that will
enhance the user experience.”
Intel’s 45nm process technology will allow chips with more than five
times less leakage power than those made today. This will improve
battery life for mobile devices and increase opportunities for building
smaller, more powerful platforms.
The 45nm SRAM chip has more than 1 billion transistors. Though not
intended as an Intel product, the SRAM demonstrates technology
performance, process yield and chip reliability prior to ramping
processors and other logic chips using the 45nm manufacturing process.
It is a key first step in the march toward high–volume manufacturing of
the world’s most complex devices.
In addition to the manufacturing capabilities of its D1D facility in
Oregon, where the initial 45nm development efforts are underway, Intel
has announced two high–volume fabs under construction to manufacture
chips using the 45nm process technology: Fab 32 in Arizona and Fab 28
in Israel.
Listen to a recorded interview with Intel senior fellow Mark Bohr by clicking the “Manufacturing” channel at http://intel.feedroom.com.
News Source: Intel Press Release
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